G2R1000MT33J
G2R1000MT33J is Silicon Carbide MOSFET manufactured by GeneSiC.
G2R1000MT33J 3300 V 1000 mΩ SiC MOSFET
Silicon Carbide MOSFET
N-Channel Enhancement Mode
Features
- Softer RDS(ON) v/s Temperature Dependency
- LoRing™
- Electromagnetically Optimized Design
- Smaller RG(INT) and Lower QG
- Low Device Capacitances (COSS, CRSS)
- Industry-Leading UIL & Short-Circuit Robustness
- Robust Body Diode with Low VF and Low QRR
- Normally Off-Stable Temperature up to 175°C
- Optimized Package with Separate Driver Source Pin
Advantages
- patible with mercial Gate Drivers
- Low Conduction Losses at all Temperatures
- Reduced Ringing
- Faster and More Efficient Switching
- Lesser Switching Spikes and Lower Losses
- Better Power Density and System Efficiency
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