G2R300MT65-CAL Datasheet | GeneSiC

6500 V 300 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode = RDS(ON)(Typ.) = ID (TC = 115°C) = 6500 V 300 mΩ 10 A Features Bare Chip - G2R™ Technology - +20 V / -5 V Gate Drive - Superior QG x RDS(ON) Figure of Merit - Low Capacitances and Low Gate Charge - Normally-Off Stable Operation up to 175°C - Fast and Reliable Body Diode - High Avalanche and Short Circuit Ruggedness - Low Conduction Losses at High Temperatures RIN Advantages E - Increased Power Density for pact System - High Frequency Switching - Reduced Losses for Higher System Efficiency IN E - Minimized Gate Ringing - Improved Thermal Capability - Superior...