G2R325MS65-CAL Overview
G2R325MS65-CAL TM 6500 V 325 mΩ SiC MOSFET Silicon Carbide MOSFET with Integrated Schottky Diode N-Channel Enhancement Mode VDS = RDS(ON)(Typ.) = ID (TC = 115°C) = 6500 V 325 mΩ 10.
G2R325MS65-CAL Key Features
- G2R™ Technology
- +20 V / -5 V Gate Drive
- Superior QG x RDS(ON) Figure of Merit
- Low Capacitances and Low Gate Charge
- Normally-Off Stable Operation up to 175°C
- Fast and Reliable Integrated Schottky Diode
- High Avalanche and Short Circuit Ruggedness
- Low Conduction Losses at High Temperatures
- Increased Power Density for pact System
- High Frequency Switching