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G2R325MS65-CAL - Silicon Carbide MOSFET

Key Features

  • Bare Chip.
  • G2R™ Technology - +20 V / -5 V Gate Drive D.
  • Superior QG x RDS(ON) Figure of Merit.
  • Low Capacitances and Low Gate Charge.
  • Normally-Off Stable Operation up to 175°C.
  • Fast and Reliable Integrated Schottky Diode G.
  • High Avalanche and Short Circuit Ruggedness.
  • Low Conduction Losses at High Temperatures RIN Advantages E.
  • Increased Power Density for Compact System.
  • High Frequency Switching E.
  • Reduc.

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Datasheet Details

Part number G2R325MS65-CAL
Manufacturer GeneSiC
File Size 642.21 KB
Description Silicon Carbide MOSFET
Datasheet download datasheet G2R325MS65-CAL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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G2R325MS65-CAL TM 6500 V 325 mΩ SiC MOSFET Silicon Carbide MOSFET with Integrated Schottky Diode N-Channel Enhancement Mode VDS = RDS(ON)(Typ.