G2R325MS65-CAL Overview
Key Features
- G2R™ Technology
- +20 V / -5 V Gate Drive D
- Superior QG x RDS(ON) Figure of Merit
- Low Capacitances and Low Gate Charge
- Normally-Off Stable Operation up to 175°C
- Fast and Reliable Integrated Schottky Diode G
- High Avalanche and Short Circuit Ruggedness
- Low Conduction Losses at High Temperatures RIN Advantages E
- Increased Power Density for Compact System
- High Frequency Switching E
