G2R325MS65-CAL
G2R325MS65-CAL is Silicon Carbide MOSFET manufactured by GeneSiC.
6500 V 325 mΩ SiC MOSFET
Silicon Carbide MOSFET with Integrated Schottky Diode
N-Channel Enhancement Mode
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RDS(ON)(Typ.) =
ID (TC = 115°C) =
6500 V 325 mΩ 10 A
Features
Bare Chip
- G2R™ Technology
- +20 V / -5 V Gate Drive
- Superior QG x RDS(ON) Figure of Merit
- Low Capacitances and Low Gate Charge
- Normally-Off Stable Operation up to 175°C
- Fast and Reliable Integrated Schottky Diode
- High Avalanche and Short Circuit Ruggedness
- Low Conduction Losses at High Temperatures
RIN Advantages E
- Increased Power Density for pact System
- High Frequency Switching
- Reduced Losses for Higher System Efficiency IN E
- Minimized Gate Ringing
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