G2R50MT33-CAL Overview
G2R50MT33-CAL 3300 V 50 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode.
G2R50MT33-CAL Key Features
- Softer RDS(ON) v/s Temperature Dependency
- LoRing™
- Electromagnetically Optimized Design
- Smaller RG(INT) and Lower QG
- Low Device Capacitances (COSS, CRSS)
- Superior Cost-Performance Index
- Robust Body Diode with Low VF and Low QRR
- Normally Off-Stable Temperature up to 175°C
- Industry-Leading UIL & Short-Circuit Robustness
- patible with mercial Gate Drivers