G3R30MT12-CAL Overview
G3R30MT12-CAL 1200 V 30 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode.
G3R30MT12-CAL Key Features
- G3R™ (3rd Generation) Technology
- Softer RDS(ON) v/s Temperature Dependency
- LoRing™
- Electromagnetically Optimized Design
- Smaller RG(INT) and Lower QG
- Low Device Capacitances (COSS, CRSS)
- Superior Cost-Performance Index
- Robust Body Diode with Low VF and Low QRR
- Industry-Leading UIL & Short-Circuit Robustness
- patible with mercial Gate Drivers