G3R30MT12-CAL Datasheet PDF (Silicon Carbide MOSFET)

G3R30MT12-CAL - Silicon Carbide MOSFET

Features

G3R™ (3rd Generation) Technology.
Softer RDS(ON) v/s Temperature Dependency.
LoRing™ - Electromagnetically Optimized Design.
Smaller RG(INT) and Lower QG.
Low Device Capacitances (COSS, CRSS).
Superior Cost-Performance Index.
Robust Body Diode with Low VF and Low QRR.
Industry-Leading UIL & Short-Circuit Robustness Advantages.
Compatible with Commercial Gate Drivers.
Low Conduction Losses at all Temperatur.

Datasheet Details

Part number	G3R30MT12-CAL
Manufacturer	GeneSiC
File Size	2.21 MB
Description	Silicon Carbide MOSFET
Datasheet	G3R30MT12-CAL Datasheet
Additional preview pages of the G3R30MT12-CAL datasheet.

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Full PDF Text Transcription

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G3R30MT12-CAL 1200 V 30 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Softer RDS(ON) v/s Temperature Dependency • LoRing™ - Electromagnetically Optimized Design • Smaller RG(INT) and Lower QG • Low Device Capacitances (COSS, CRSS) • Superior Cost-Performance Index • Robust Body Diode with Low VF and Low QRR • Industry-Leading UIL & Short-Circuit Robustness Advantages • Compatible with Commercial Gate Drivers • Low Conduction Losses at all Temperatures • Reduced Ringing • Faster and More Efficient Switching • Lesser Switching Spikes and Lower Losses • Better Power Density and System Efficiency • Ease of Paralleling without Thermal Runaway • Higher System Reliability TM VDS = RDS(ON)(Typ.

Published: Dec 8, 2024 |