G3R350MT12J Description
G3R350MT12J 1200 V 350 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode.
G3R350MT12J Key Features
- G3R™ (3rd Generation) Technology
- Low Temperature Coefficient of RDS(ON)
- Lower QG and Smaller RG(INT)
- Low Device Capacitances (COSS, CRSS)
- LoRing™
- Electromagnetically Optimized Design
- Superior Cost-Performance Index
- Robust Body Diode with Low VF and Low QRR
- 100% Avalanche (UIL) Tested
- patible with mercial Gate Drivers