G3R450MT17J Description
G3R450MT17J 1700 V 450 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode.
G3R450MT17J Key Features
- G3R™ Technology with +15 V Gate Drive
- Softer RDS(ON) v/s Temperature Dependency
- LoRing™
- Electromagnetically Optimized Design
- Smaller RG(INT) and Lower QG
- Low Device Capacitances (COSS, CRSS)
- Superior Cost-Performance Index
- Robust Body Diode with Low VF and Low QRR
- Optimized Package with Separate Driver Source Pin
- patible with mercial Gate Drivers