G3R75MT12J Overview
Key Features
- G3R™ (3rd Generation) Technology
- Low Temperature Coefficient of RDS(ON)
- Lower QG and Smaller RG(INT)
- Low Device Capacitances (COSS, CRSS)
- Electromagnetically Optimized Design
- Superior Cost-Performance Index
- Robust Body Diode with Low VF and Low QRR
- 100% Avalanche (UIL) Tested Advantages
- Compatible with Commercial Gate Drivers
- Low Conduction Losses at all Temperatures
