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GAP3SLT33-214 - Silicon Carbide Schottky Diode

Features

  • Enhanced Surge and Avalanche Robustness.
  • Superior Figure of Merit QC/IF.
  • Low VF for High Temperature Operation.
  • Low Thermal Resistance.
  • Low Reverse Leakage Current.
  • Temperature Independent Fast Switching.
  • Positive Temperature Coefficient of VF.
  • High dV/dt Ruggedness Package DO-214 TM VRRM = IF (TL ≤ 125°C) = QC = 3300 V 0.3 A 14 nC K RoHS A REACH Advantages.
  • High System Reliability.
  • Optimal Pri.

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Datasheet preview – GAP3SLT33-214

Datasheet Details

Part number GAP3SLT33-214
Manufacturer GeneSiC
File Size 403.76 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GAP3SLT33-214 Datasheet
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Full PDF Text Transcription

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GAP3SLT33-214 3300V 0.3A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Enhanced Surge and Avalanche Robustness • Superior Figure of Merit QC/IF • Low VF for High Temperature Operation • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • High dV/dt Ruggedness Package DO-214 TM VRRM = IF (TL ≤ 125°C) = QC = 3300 V 0.
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