Part GAP3SLT33-214
Description Silicon Carbide Schottky Diode
Category Diode
Manufacturer GeneSiC
Size 403.76 KB
GeneSiC

GAP3SLT33-214 Overview

Key Features

  • Enhanced Surge and Avalanche Robustness
  • Superior Figure of Merit QC/IF
  • Low VF for High Temperature Operation
  • Low - Low Reverse Leakage Current
  • Temperature Independent Fast Switching
  • Positive Temperature Coefficient of VF
  • High dV/dt Ruggedness Package DO-214 TM VRRM = IF (TL ≤ 125°C) = QC = 3300 V 0.3 A 14 nC K RoHS A REACH Advantages
  • High System Reliability
  • Optimal Price Performance
  • Improved System Efficiency