GB01SLT06-214 Description
GB01SLT06-214 650V 1A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode.
GB01SLT06-214 Key Features
- Low VF for High Temperature Operation
- Enhanced Surge and Avalanche Robustness
- Superior Figure of Merit QC/IF
- Low Thermal Resistance
- Low Reverse Leakage Current
- Temperature Independent Fast Switching
- Positive Temperature Coefficient of VF
- High dV/dt Ruggedness
- Improved System Efficiency
- High System Reliability