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GB02SLT12-252 - Silicon Carbide Schottky Diode

Features

  • High Avalanche (UIS) Capability.
  • Enhanced Surge Current Capability.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • 175 °C Maximum Operating Temperature.
  • Temperature Independent Switching Behavior.
  • Positive Temperature Coefficient of VF.
  • Extremely Fast Switching Speeds Package Case VRRM IF (Tc = 135°C) QC = 1200 V = 6A = 8 nC 2 1 TO-252-2L Advantages.
  • Low Standby Power Losses.
  • Improved Circui.

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Datasheet preview – GB02SLT12-252

Datasheet Details

Part number GB02SLT12-252
Manufacturer GeneSiC
File Size 468.71 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GB02SLT12-252 Datasheet
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Full PDF Text Transcription

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GB02SLT12-252 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds Package Case VRRM IF (Tc = 135°C) QC = 1200 V = 6A = 8 nC 2 1 TO-252-2L Advantages • Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Reverse Leakage Current Applications • Boost Diode in Power Factor Correction (PFC) • Switched Mode Power
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