GB05MPS33-263
GB05MPS33-263 is Silicon Carbide Schottky Diode manufactured by GeneSiC.
GB05MPS33-263 3300V 5A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
- Enhanced Surge and Avalanche Robustness
- Superior Figure of Merit QC/IF
- Low VF for High Temperature Operation
- Low Thermal Resistance
- Low Reverse Leakage Current
- Temperature Independent Fast Switching
- Positive Temperature Coefficient of VF
- High dV/dt Ruggedness
Advantages
- High System Reliability
- Optimal Price Performance
- Improved System Efficiency
- Reduced Cooling Requirements
- Increased System Power Density
- Zero Reverse Recovery Current
- Easy to Parallel without Thermal Runaway
- Enables Extremely Fast Switching
Package
VRRM
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IF (TC = 135°C) =
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3300 V 8A 43...
