Part GB05MPS33-263
Description Silicon Carbide Schottky Diode
Category Diode
Manufacturer GeneSiC
Size 723.46 KB
GeneSiC

GB05MPS33-263 Overview

Key Features

  • Enhanced Surge and Avalanche Robustness
  • Superior Figure of Merit QC/IF
  • Low VF for High Temperature Operation
  • Low - Low Reverse Leakage Current
  • Temperature Independent Fast Switching
  • Positive Temperature Coefficient of VF
  • High dV/dt Ruggedness Advantages
  • High System Reliability
  • Optimal Price Performance
  • Improved System Efficiency