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GB05MPS33-263 - Silicon Carbide Schottky Diode

Features

  • Enhanced Surge and Avalanche Robustness.
  • Superior Figure of Merit QC/IF.
  • Low VF for High Temperature Operation.
  • Low Thermal Resistance.
  • Low Reverse Leakage Current.
  • Temperature Independent Fast Switching.
  • Positive Temperature Coefficient of VF.
  • High dV/dt Ruggedness Advantages.
  • High System Reliability.
  • Optimal Price Performance.
  • Improved System Efficiency.
  • Reduced Cooling Requirements.

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Datasheet preview – GB05MPS33-263

Datasheet Details

Part number GB05MPS33-263
Manufacturer GeneSiC
File Size 723.46 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GB05MPS33-263 Datasheet
Additional preview pages of the GB05MPS33-263 datasheet.

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Full PDF Text Transcription

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GB05MPS33-263 3300V 5A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Enhanced Surge and Avalanche Robustness • Superior Figure of Merit QC/IF • Low VF for High Temperature Operation • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • High dV/dt Ruggedness Advantages • High System Reliability • Optimal Price Performance • Improved System Efficiency • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching TM Package VRRM = IF (TC = 135°C) = QC = 3300 V 8A 43 nC Case RoHS TO-263-7 K A REACH Applications • Medical Imaging • High Voltage Sensing • Oil Drilling
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