GB05MPS33-263 Description
GB05MPS33-263 3300V 5A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode.
GB05MPS33-263 Key Features
- Enhanced Surge and Avalanche Robustness
- Superior Figure of Merit QC/IF
- Low VF for High Temperature Operation
- Low Thermal Resistance
- Low Reverse Leakage Current
- Temperature Independent Fast Switching
- Positive Temperature Coefficient of VF
- High dV/dt Ruggedness
- High System Reliability
- Optimal Price Performance