GB10SLT12-252 Overview
GB10SLT12-252 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode.
GB10SLT12-252 Key Features
- High Avalanche (UIS) Capability
- Enhanced Surge Current Capability
- Superior Figure of Merit QC/IF
- Low Thermal Resistance
- 175 °C Maximum Operating Temperature
- Temperature Independent Switching Behavior
- Positive Temperature Coefficient of VF
- Extremely Fast Switching Speeds
- Low Standby Power Losses
- Improved Circuit Efficiency (Lower Overall Cost)
GB10SLT12-252 Applications
- Boost Diode in Power Factor Correction (PFC)