Part GC10MPS12-252
Description Silicon Carbide Schottky Diode
Category Diode
Manufacturer GeneSiC
Size 462.22 KB
GeneSiC

GC10MPS12-252 Overview

Key Features

  • High Avalanche (UIS) Capability
  • Enhanced Surge Current Capability
  • Superior Figure of Merit QC/IF
  • Low - 175 °C Maximum Operating Temperature
  • Temperature Independent Switching Behavior
  • Positive Temperature Coefficient of VF
  • Extremely Fast Switching Speeds Package Case VRRM IF (Tc = 135°C) QC = 1200 V = 25 A = 40 nC 2 1 TO-252-2L Advantages
  • Low Standby Power Losses
  • Improved Circuit Efficiency (Lower Overall Cost)
  • Low Switching Losses