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GC50MPS06-247 - Silicon Carbide Schottky Diode

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GeneSiC

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GC50MPS06-247 Silicon Carbide Schottky Diode by GeneSiC - Datasheet Preview — Datasheet preview – GC50MPS06-247

Datasheet Details

Part number	GC50MPS06-247
Manufacturer	GeneSiC
File Size	676.21 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GC50MPS06-247 Datasheet
Additional preview pages of the GC50MPS06-247 datasheet.

Product details

Features

High Avalanche (UIS) Capability.
Enhanced Surge Current Capability.
Superior Figure of Merit QC/IF.
Low Thermal Resistance.
175 °C Maximum Operating Temperature.
Temperature Independent Switching Behavior.
Positive Temperature Coefficient of VF.
Extremely Fast Switching Speeds Package Case K VRRM IF (Tc = 135°C) QC Case K A TO-247-2 A = 650 V = 92 A = 80 nC Advantages.
Low Standby Power Losses.
Improv.

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Published: Dec 26, 2024 |