Datasheet Summary
650 V SiC MPS™ Diode
Silicon Carbide Schottky Diode
Features
- High Avalanche (UIS) Capability
- Enhanced Surge Current Capability
- Superior Figure of Merit QC/IF
- Low Thermal Resistance
- 175 °C Maximum Operating Temperature
- Temperature Independent Switching Behavior
- Positive Temperature Coefficient of VF
- Extremely Fast Switching Speeds
Package
Case
VRRM IF (Tc = 135°C) QC
Case K
TO-247-2 A
= 650 V = 92 A = 80 nC
Advantages
- Low Standby Power Losses
- Improved Circuit Efficiency (Lower Overall Cost)
- Low Switching Losses
- Ease of Paralleling without Thermal Runaway
- Smaller Heat Sink Requirements
- Low Reverse Recovery Current
- Low Device Capacitance
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