Part GC50MPS06-247
Description Silicon Carbide Schottky Diode
Category Diode
Manufacturer GeneSiC
Size 676.21 KB
GeneSiC

GC50MPS06-247 Overview

Key Features

  • High Avalanche (UIS) Capability
  • Enhanced Surge Current Capability
  • Superior Figure of Merit QC/IF
  • Low - 175 °C Maximum Operating Temperature
  • Temperature Independent Switching Behavior
  • Positive Temperature Coefficient of VF
  • Extremely Fast Switching Speeds Package Case K VRRM IF (Tc = 135°C) QC Case K A TO-247-2 A = 650 V = 92 A = 80 nC Advantages
  • Low Standby Power Losses
  • Improved Circuit Efficiency (Lower Overall Cost)
  • Low Switching Losses