Datasheet4U Logo Datasheet4U.com

GC50MPS06-247 - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • High Avalanche (UIS) Capability.
  • Enhanced Surge Current Capability.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • 175 °C Maximum Operating Temperature.
  • Temperature Independent Switching Behavior.
  • Positive Temperature Coefficient of VF.
  • Extremely Fast Switching Speeds Package Case K VRRM IF (Tc = 135°C) QC Case K A TO-247-2 A = 650 V = 92 A = 80 nC Advantages.
  • Low Standby Power Losses.
  • Improv.

📥 Download Datasheet

Datasheet preview – GC50MPS06-247

Datasheet Details

Part number GC50MPS06-247
Manufacturer GeneSiC
File Size 676.21 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GC50MPS06-247 Datasheet
Additional preview pages of the GC50MPS06-247 datasheet.

📁 Similar Datasheet

  • GC500 - Transistor (Tesla Elektronicke)
  • GC501 - Transistor (Tesla Elektronicke)
  • GC5018 - 8-CHANNEL WIDEBAND RECEIVER (Texas Instruments)
  • GC5018 - single-cell lithium-ion/lithium polymer rechargeable battery protection (Gem micro)
  • GC502 - Transistor (Tesla Elektronicke)
  • GC5040-220M - Power Inductors (GROUP-TEK)
  • GC507 - Transistor (Tesla Elektronicke)
  • GC508 - Transistor (Tesla Elektronicke)
  • GC509 - Transistor (Tesla Elektronicke)
  • GC510 - Transistor (Tesla Elektronicke)
Other Datasheets by GeneSiC

Full PDF Text Transcription

Click to expand full text
GC50MPS06-247 650 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds Package Case K VRRM IF (Tc = 135°C) QC Case K A TO-247-2 A = 650 V = 92 A = 80 nC Advantages • Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Reverse Leakage Current Applications • Boost Diode in Power Factor Correction (PFC) • Switched M
Published: |