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GC50MPS33H - Silicon Carbide Schottky Diode

Datasheet Summary

Features

  • Package.
  • Enhanced Surge and Avalanche Robustness.
  • Low VF for High Temperature Operation.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • Low Reverse Leakage Current.
  • Temperature Independent Fast Switching.
  • Positive Temperature Coefficient of VF G.
  • High dV/dt Ruggedness RIN Advantages.
  • High System Reliability E.
  • Optimal Price Performance.
  • Improved System Efficiency E.
  • Reduced Cool.

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Datasheet preview – GC50MPS33H

Datasheet Details

Part number GC50MPS33H
Manufacturer GeneSiC
File Size 541.97 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GC50MPS33H Datasheet
Additional preview pages of the GC50MPS33H datasheet.

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Full PDF Text Transcription

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GC50MPS33H TM 3300V 40A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode VRRM = IF (TC = 152°C) = QC = 3300 V 40 A 429 nC Features Package • Enhanced Surge and Avalanche Robustness • Low VF for High Temperature Operation • Superior Figure of Merit QC/IF • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF G • High dV/dt Ruggedness RIN Advantages • High System Reliability E • Optimal Price Performance • Improved System Efficiency E • Reduced Cooling Requirements IN E • Increased System Power Density • Zero Reverse Recovery Current L • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching Case TO-247-2 K A Applications • EV Fast Chargers • 1500V Solar Inverters • P
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