Datasheet Summary
3300V 40A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
VRRM
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IF (TC = 152°C) =
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3300 V 40 A 429 nC
Features
Package
- Enhanced Surge and Avalanche Robustness
- Low VF for High Temperature Operation
- Superior Figure of Merit QC/IF
- Low Thermal Resistance
- Low Reverse Leakage Current
- Temperature Independent Fast Switching
- Positive Temperature Coefficient of VF
- High dV/dt Ruggedness RIN Advantages
- High System Reliability
- Optimal Price Performance
- Improved System Efficiency
- Reduced Cooling Requirements IN E
- Increased System Power Density
- Zero Reverse Recovery Current
- Easy to Parallel without Thermal Runaway
- Enables...