GC50MPS33H Overview
GC50MPS33H TM 3300V 40A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode VRRM = IF (TC = 152°C) = QC = 3300 V 40 A 429.
GC50MPS33H Key Features
- Enhanced Surge and Avalanche Robustness
- Low VF for High Temperature Operation
- Superior Figure of Merit QC/IF
- Low Thermal Resistance
- Low Reverse Leakage Current
- Temperature Independent Fast Switching
- Positive Temperature Coefficient of VF
- High dV/dt Ruggedness RIN Advantages
- High System Reliability
- Optimal Price Performance