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GC50MPS33H
TM
3300V 40A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
VRRM
=
IF (TC = 152°C) =
QC
=
3300 V 40 A 429 nC
Features
Package
• Enhanced Surge and Avalanche Robustness • Low VF for High Temperature Operation • Superior Figure of Merit QC/IF • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF
G • High dV/dt Ruggedness RIN Advantages
• High System Reliability
E • Optimal Price Performance
• Improved System Efficiency
E • Reduced Cooling Requirements IN E • Increased System Power Density
• Zero Reverse Recovery Current
L • Easy to Parallel without Thermal Runaway
• Enables Extremely Fast Switching
Case
TO-247-2
K
A
Applications
• EV Fast Chargers • 1500V Solar Inverters • P
GC50MPS33H Datasheet
