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GD02MPS12E - Silicon Carbide Schottky Diode

Features

  • Gen4 Thin Chip Technology for Low VF.
  • Superior Figure of Merit QC.
  • VF.
  • 100% Avalanche (UIL) Tested.
  • Enhanced Surge Current Withstand Capability.
  • Temperature Independent Fast Switching.
  • Low Thermal Resistance.
  • Positive Temperature Coefficient of VF.
  • High dV/dt Ruggedness Advantages.
  • Improved System Efficiency.
  • High System Reliability.
  • Optimal Price Performance.
  • Reduced Cooling Requireme.

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Datasheet Details

Part number GD02MPS12E
Manufacturer GeneSiC
File Size 490.26 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GD02MPS12E Datasheet
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GD02MPS12E 1200V 2A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Merit QC*VF • 100% Avalanche (UIL) Tested • Enhanced Surge Current Withstand Capability • Temperature Independent Fast Switching • Low Thermal Resistance • Positive Temperature Coefficient of VF • High dV/dt Ruggedness Advantages • Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Enables Extremely Fast Switching Package TM VRRM = IF (TC = 166°C) = QC = 1200 V 2A 6 nC Case RoHS TO-252-2 K A REACH Applications • High Voltage Sensing • Solar Inverters • Electric Vehi
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