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GD05MPS17J - Silicon Carbide Schottky Diode

Features

  • Gen4 Thin Chip Technology for Low VF.
  • Enhanced Surge and Avalanche Robustness.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • Low Reverse Leakage Current.
  • Temperature Independent Fast Switching.
  • Positive Temperature Coefficient of VF.
  • Low VF for High Temperature Operation Advantages.
  • Improved System Efficiency.
  • High System Reliability.
  • Optimal Price Performance.
  • Reduced Cooling R.

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Datasheet preview – GD05MPS17J

Datasheet Details

Part number GD05MPS17J
Manufacturer GeneSiC
File Size 673.79 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GD05MPS17J Datasheet
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Full PDF Text Transcription

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GD05MPS17J 1700V 5A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Enhanced Surge and Avalanche Robustness • Superior Figure of Merit QC/IF • Low Thermal Resistance • Low Reverse Leakage Current • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • Low VF for High Temperature Operation Advantages • Improved System Efficiency • High System Reliability • Optimal Price Performance • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • Improved System Efficiency Package TM VRRM = IF (TC = 164°C) = QC = 1700 V 5A 41 nC Case RoHS TO-263-7 K A REACH Applications • EV Fast Chargers • Solar Inverters • Anti-Paral
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