GE08MPS06E Description
GE08MPS06E 650V 8A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode.
GE08MPS06E Key Features
- Gen5 Thin Chip Technology for Low VF
- Low Conduction Losses for All Load Conditions
- Superior Figure of Merit QC/IF
- Enhanced Surge Current Robustness
- Low Thermal Resistance
- Temperature Independent Fast Switching
- Positive Temperature Coefficient of VF
- High dV/dt Ruggedness
- Optimal Price Performance
- Improved System Efficiency