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GE08MPS06E 650V 8A SiC Schottky MPS™ Diode
Silicon Carbide Schottky Diode
Features
• Gen5 Thin Chip Technology for Low VF • Low Conduction Losses for All Load Conditions • Superior Figure of Merit QC/IF • Enhanced Surge Current Robustness • Low Thermal Resistance • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • High dV/dt Ruggedness
Advantages
• Optimal Price Performance • Improved System Efficiency • Enables Extremely Fast Switching • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • High System Reliability
TM
Package
VRRM
=
IF (TC = 162°C) =
QC
=
650 V 8A 20 nC
Case
RoHS
TO-252-2
K
A
REACH
Applications
• Switched Mode Power Supply (SMPS) • Solar Inver
GE08MPS06E Datasheet
