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GE10MPS06A - Silicon Carbide Schottky Diode

Key Features

  • Gen5 Thin Chip Technology for Low VF.
  • Low Conduction Losses for All Load Conditions.
  • Superior Figure of Merit QC/IF.
  • Enhanced Surge Current Robustness.
  • Low Thermal Resistance.
  • Temperature Independent Fast Switching.
  • Positive Temperature Coefficient of VF.
  • High dV/dt Ruggedness Advantages.
  • Optimal Price Performance.
  • Improved System Efficiency.
  • Enables Extremely Fast Switching.
  • Reduced Cool.

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Datasheet Details

Part number GE10MPS06A
Manufacturer GeneSiC
File Size 513.74 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GE10MPS06A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GE10MPS06A 650V 10A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen5 Thin Chip Technology for Low VF • Low Conduction Losses for All Load Conditions • Superior Figure of Merit QC/IF • Enhanced Surge Current Robustness • Low Thermal Resistance • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • High dV/dt Ruggedness Advantages • Optimal Price Performance • Improved System Efficiency • Enables Extremely Fast Switching • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • High System Reliability TM Package VRRM = IF (TC = 150°C) = QC = 650 V 10 A 25 nC Case RoHS TO-220-2 K A REACH Applications • Switched Mode Power Supply (SMPS) • Solar In