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GE2X8MPS06D - Silicon Carbide Schottky Diode

Features

  • Gen5 Thin Chip Technology for Low VF.
  • Low Conduction Losses for All Load Conditions.
  • Superior Figure of Merit QC/IF.
  • Enhanced Surge Current Robustness.
  • Low Thermal Resistance.
  • Temperature Independent Fast Switching.
  • Positive Temperature Coefficient of VF.
  • High dV/dt Ruggedness Advantages.
  • Optimal Price Performance.
  • Improved System Efficiency.
  • Enables Extremely Fast Switching.
  • Reduced Cool.

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Datasheet preview – GE2X8MPS06D

Datasheet Details

Part number GE2X8MPS06D
Manufacturer GeneSiC
File Size 508.81 KB
Description Silicon Carbide Schottky Diode
Datasheet download datasheet GE2X8MPS06D Datasheet
Additional preview pages of the GE2X8MPS06D datasheet.

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    Full PDF Text Transcription

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    GE2X8MPS06D 650V 16A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen5 Thin Chip Technology for Low VF • Low Conduction Losses for All Load Conditions • Superior Figure of Merit QC/IF • Enhanced Surge Current Robustness • Low Thermal Resistance • Temperature Independent Fast Switching • Positive Temperature Coefficient of VF • High dV/dt Ruggedness Advantages • Optimal Price Performance • Improved System Efficiency • Enables Extremely Fast Switching • Reduced Cooling Requirements • Increased System Power Density • Zero Reverse Recovery Current • Easy to Parallel without Thermal Runaway • High System Reliability TM Package VRRM = IF (TC = 159°C) = QC = 650 V 16 A * 40 nC * Case RoHS TO-247-3 AKA REACH Applications • Switched Mode Power Supply (SMPS) • Sola
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