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MBR12020CT - Silicon Power Schottky Diode

Datasheet Summary

Features

  • High Surge Capability.
  • Types from 20 V to 40 V VRRM.
  • Not ESD Sensitive MBR12020CT thru MBR12040CTR VRRM = 20 V - 40 V IF(AV) = 120 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj.

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Datasheet Details

Part number MBR12020CT
Manufacturer GeneSiC
File Size 717.53 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBR12020CT Datasheet
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Full PDF Text Transcription

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive MBR12020CT thru MBR12040CTR VRRM = 20 V - 40 V IF(AV) = 120 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR12020CT(R) MBR12030CT(R) MBR12035CT(R) MBR12040CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VR
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