• Part: MBR300150CT
  • Description: Silicon Power Schottky Diode
  • Category: Diode
  • Manufacturer: GeneSiC
  • Size: 696.80 KB
Download MBR300150CT Datasheet PDF
GeneSiC
MBR300150CT
MBR300150CT is Silicon Power Schottky Diode manufactured by GeneSiC.
Features - High Surge Capability - Types from 150 V to 200 V VRRM - Not ESD Sensitive MBR300150CT thru MBR300200CTR VRRM = 150 V - 200 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR300150CT(R) MBR300200CT(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 106 150 -55 to 150 -55 to 150 141 200 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR300150CT(R) Average forward current (per pkg) Peak forward surge current (per leg) IF(AV) IFSM Maximum forward voltage (per leg) Reverse current at rated DC blocking voltage (per leg) Thermal characteristics Thermal resistance, junction-case (per leg) RΘJC TC = 125 °C tp = 8.3 ms, half sine IFM =...