MBR600100CTR Datasheet Silicon Power Schottky Diode

Manufacturer: GeneSiC

Overview: Silicon Power Schottky Diode.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	MBR600100CTR
Manufacturer	GeneSiC
File Size	461.66 KB
Description	Silicon Power Schottky Diode
Datasheet	MBR600100CTR MBR60045CT Datasheet (PDF)

High Surge Capability.
Types from 45 V to 100 V VRRM.
Not ESD Sensitive MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR60045CT(R) MBR60060CT(R) MBR60080CT(R) MBR600100CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VD.

Part Number	Description	Manufacturer
MBR600100CTR	Schottky Power Diode	Naina Semiconductor
MBR600100CTR	Silicon Power Schottky Diode	America Semiconductor
MBR600100CT	Schottky Power Diode	Naina Semiconductor
MBR600100CT	Silicon Power Schottky Diode	America Semiconductor

Part Number	Description
MBR600100CT	Silicon Power Schottky Diode
MBR60020CT	Silicon Power Schottky Diode
MBR60020CTR	Silicon Power Schottky Diode
MBR60030CT	Silicon Power Schottky Diode
MBR60030CTR	Silicon Power Schottky Diode
MBR60035CT	Silicon Power Schottky Diode
MBR60035CTR	Silicon Power Schottky Diode
MBR60040CT	Silicon Power Schottky Diode
MBR60040CTR	Silicon Power Schottky Diode
MBR60045CT	Silicon Power Schottky Diode