Datasheet Summary
Silicon Power Schottky Diode
Features
- High Surge Capability
- Types from 45 V to 100 V VRRM
- Not ESD Sensitive
MBR60045CT thru MBR600100CTR
VRRM = 45 V
- 100 V IF(AV) = 600 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR60045CT(R) MBR60060CT(R) MBR60080CT(R) MBR600100CT(R) Unit
Repetitive peak reverse voltage RMS reverse voltage
DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
32 45 -55 to 150 -55 to 150
42 60 -55 to 150 -55 to 150
57 80 -55 to 150 -55 to 150
70 100 -55 to 150 -55 to 150
V V °C °C
Electrical characteristics, at...
