MBR600100CT Datasheet
MBR600100CT Datasheet (GeneSiC)
GeneSiC
Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package M.
* High Surge Capability
* Types from 45 V to 100 V VRRM
* Not ESD Sensitive
MBR60045CT thru MBR600100CTR
VRRM = 45 V - 100 V IF(AV) = 600 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBR60045CT(R) .
MBR600100CT Datasheet (Naina Semiconductor)
Naina Semiconductor
Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN.
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* Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR60045CT thru MBR600100CTR
Silicon Schottky Diode, 600A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage D.
MBR600100CT Datasheet (America Semiconductor)
America Semiconductor
Free Datasheet Free Datasheet .
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