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MBR6060 - Silicon Power Schottky Diode

This page provides the datasheet information for the MBR6060, a member of the MBR6045 Silicon Power Schottky Diode family.

Datasheet Summary

Features

  • High Surge Capability.
  • Types from 45 V to 100 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR6045 thru MBR60100R VRRM = 45 V - 100 V IF = 60 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR6045 (R) MBR6060 (R) MBR6080 (R) MBR60100 (R) Unit Repetitive peak reverse voltage RMS reverse voltag.

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Datasheet preview – MBR6060

Datasheet Details

Part number MBR6060
Manufacturer GeneSiC
File Size 723.75 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBR6060 Datasheet
Additional preview pages of the MBR6060 datasheet.

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Full PDF Text Transcription

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR6045 thru MBR60100R VRRM = 45 V - 100 V IF = 60 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR6045 (R) MBR6060 (R) MBR6080 (R) MBR60100 (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.
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