• Part: MBR6060R
  • Description: Silicon Power Schottky Diode
  • Category: Diode
  • Manufacturer: GeneSiC
  • Size: 723.75 KB
Download MBR6060R Datasheet PDF
GeneSiC
MBR6060R
Features - High Surge Capability - Types from 45 V to 100 V VRRM - Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR6045 thru MBR60100R VRRM = 45 V - 100 V IF = 60 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR6045 (R) MBR6060 (R) MBR6080 (R) MBR60100 (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.3 ms 45 32 45 60 -55 to 150 -55 to 150 60 42 60 60 -55 to 150 -55 to 150 80 50 80 60 -55 to 150 -55 to 150 100 70 100 60 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions...