Datasheet4U Logo Datasheet4U.com

MUR40040CT - Silicon Super Fast Recovery Diode

Key Features

  • High Surge Capability.
  • Types up to 600 V VRRM MUR40040CT thru MUR40060CTR VRRM = 50 V - 600 V IF = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR40040CT (R) MUR40060CT (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 125 °C 400 280 400 400 600 420 600 400 Surge non-repetitive forward curr.

📥 Download Datasheet

Datasheet Details

Part number MUR40040CT
Manufacturer GeneSiC
File Size 687.15 KB
Description Silicon Super Fast Recovery Diode
Datasheet download datasheet MUR40040CT Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MUR400 MUR400 HUAJING
MUR40120PT Ultrafast Rectifier INCHANGE
MUR4020 Fast Recovery Rectifier INCHANGE
MUR405 4 AMP ULTRA FAST RECTIFIER Digitron Semiconductors
MUR405 Glass Passivated High Efficiency Rectifier MIC

Other Datasheets by GeneSiC

Part Number Description
MUR40040CTR Silicon Super Fast Recovery Diode
MUR40060CT Silicon Super Fast Recovery Diode
MUR40060CTR Silicon Super Fast Recovery Diode
MUR10005CT Silicon Super Fast Recovery Diode
MUR10005CTR Silicon Super Fast Recovery Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types up to 600 V VRRM MUR40040CT thru MUR40060CTR VRRM = 50 V - 600 V IF = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR40040CT (R) MUR40060CT (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 125 °C 400 280 400 400 600 420 600 400 Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.