General Semiconductor BAT86
Schottky Diodes
| Part No. | BAT86 |
|---|---|
| Datasheet | BAT86 Download |
| Manufacturer |  General Semiconductor |
| Description | Schottky Diodes |
| Buy | Stock & Price |
FEATURES
♦ For general purpose applications. ♦ This diode features low turn-on voltmax. ∅.079 (2.0) max. .150 (3.8) age. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Cathode Mark min. 1.083 (27.5) ♦ Metal-on-silicon Schottky barrier device which is max. ∅.020 (0.52) ♦ This diode is also available in the Mini-MELF case with the type designation BAS86. Dimensions in inches and (millimeters)MECHANICAL DATA
Case: DO-35 Glass Case Weight: approx. 0.13 gMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified Symbol Continuous Reverse Voltage Forward Continuous Current at Tamb = 25 °C Repetitive Forward Current at tp < 1 s, υ ≤ 0.5, Tamb = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Ambient Operating Temperature Range Storage Temperature Range 1) Min. – – – – – –65 –65 Max.