Datasheet Summary
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Schottky Diodes
DO-35 min. 1.083 (27.5)
Features
- For general purpose applications.
- This diode Features low turn-on voltmax. ∅.079 (2.0) max. .150 (3.8) age. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications.
Cathode Mark min. 1.083 (27.5)
- Metal-on-silicon Schottky barrier device which is max. ∅.020 (0.52)
- This diode is also available in the...