NXP Semiconductors BAT86
The diode is suitable for mounting on a 2 E (5.08 mm) pitch.FEATURES
● Low forward voltage● Guard ring protected
● Hermetically-sealed leaded glass package.
APPLICATIONS
● Ultra high-speed switching● Voltage clamping
● Protection circuits
● Blocking diodes.
DESCRIPTION
BAT86 Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. k handbook, halfpage a MAM193 Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF IF(AV) PARAMETER continuous reverse voltage continuous forward current average forward current CONDITIONS − − PCB mounting, lead length = 4 mm; − VRWM = 25 V; a = 1.57; δ = 0.5; Tamb = 50 °C; see Fig.2 tp ≤ 1 s; δ ≤ 0.5 tp ≤ 10 ms − − −65 − −65 MIN. MAX. 50 200 200 V mA mA UNIT IFRM IFSM Tstg Tj Tamb repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature...