• Part: FE2B
  • Description: GLASS PASSIVATED FAST EFFICIENT RECTIFIER
  • Manufacturer: General Semiconductor
  • Size: 52.99 KB
Download FE2B Datasheet PDF
General Semiconductor
FE2B
FE2B is GLASS PASSIVATED FAST EFFICIENT RECTIFIER manufactured by General Semiconductor.
FEATURES - High temperature metallurgically bonded construction - Glass passivated cavity-free junction - Superfast recovery time for high efficiency - Low forward voltage, high current capability - Capable of meeting environmental standards of MIL-S-19500 - Hermetically sealed package - Low leakage - High surge capability - High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension TE A P 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. 1.0 (25.4) MIN. MECHANICAL DATA Case: JEDEC DO-204AP solid glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.002 ounce, 0.56 gram Dimensions in inches and (millimeters) - Brazed-lead assembly is covered by Patent No. 3,930,306 MAXIMUM RATINGS AND MECHANICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS FE2A FE2C FE2D UNITS Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5mm) lead length at TL=75°C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 2.0A Maximum DC reverse current at rated DC blocking voltage Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3, 4) Operating junction and storage temperature range TA=25°C TA=100°C VRRM VRMS VDC I(AV) 50 35 50 100 70 100 2.0 150 105 150 200 140 200 Volts Volts Volts Amps IFSM VF IR trr CJ RΘJA RΘJL TJ, TSTG 50.0 0.95 2.0 50.0 35.0 45.0 60.0 20.0 -65 to +175 Amps Volts µA ns p F °C/W °C Maximum reverse recovery time (NOTE 1) NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHZ and applied reverse voltage of 4.0 VDC (3) Thermal resistance from junction to ambient at 0.375" (9.5mm)...