Datasheet Summary
N-Channel Enhancement-Mode MOSFET
TGREENNCFHET®
VDS 30V RDS(ON) 13mΩ ID 50A
TO-220AB
0.415 (10.54) Max.
0.154 (3.91) 0.142 (3.60)Dia.
0.113 (2.87)
- 0.102 (2.56)
0.155 (3.93) D 0.134 (3.40)
0.410 (10.41) 0.350 (8.89)
PIN G DS
0.635 (16.13) 0.580 (14.73)
0.360 (9.14) 0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.160 (4.06) 0.09 (2.28)
0.560 (14.22) 0.530 (13.46)
0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14)
0.603 (15.32) 0.573 (14.55)
0.104 (2.64) 0.094 (2.39)
Features
- Advanced Process Technology
- High Density Cell Design for Ultra Low On-Resistance
- Specially Designed for Low Voltage DC/DC Converters
- Fast Switching for High Efficiency
Mechanical...