GP2M007A080F Description
Pulse width limited by safe operating area.
GP2M007A080F Key Features
- Low gate charge
- Improved dv/dt capability
- RoHS pliant
- JEDEC Qualification
GP2M007A080F is N-channel MOSFET manufactured by Global Power.
| Part Number | Description |
|---|---|
| GP2D003A060A | 600V SiC Schottky Diode |
Pulse width limited by safe operating area.