MJIRF6N70
MJIRF6N70 is POWER MOSFET manufactured by Global Semiconductor.
ID = 6A VDS = 700V RDS(on)MAX = 1.65Ω
Major Ratings and Characteristics
Characteristics
Values
Units
ID 6.0 A IDM 24 A VDS 700 V
VGS TJ T storage
±30 150 -55 ~150
℃ ℃
POWER MOSFET
Description/ Features
The MJIRF6N70 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
- 150℃ Tj operation
- Low Power Loss & Low cost
- Fast Switching
- RoHS pliant
Case Styles
Ordering Information...
