GSM2120Y Datasheet PDF

Globaltech GSM2120Y

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

Part No.	GSM2120Y
Datasheet	GSM2120Y Download
Manufacturer	Globaltech
Description	N+P Dual-Channel MOSFET
Buy	Stock & Price

DESCRIPTION

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

FEATURES

N-Channel 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V P-Channel -20V, -0.4A, RDS(ON)=600mΩ@VGS=-4.5V Fast switching Suit for 1.5V/-1.5V Gate Drive

APPLICATIONS

Green Device Available SOT-563 package design

APPLICATIONS

Notebook Load Switch Networking Hand-held Instruments Packages & Pin Assignments GSM2120YX7F (SOT-563) Top Views Pin

DESCRIPTION

1 Source 1 2 Gate 1 3 Drain 2 4 Source 2 5 Gate 2 6 Drain 1 GSM2120Y 1 Ordering Information Marking Information Part Number GSM2120YX7F Package SOT-563