Datasheet Summary
20V N+P Dual Channel MOSFETs
Product Description
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
- N-Channel 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V
- P-Channel -20V, -0.4A, RDS(ON)=600mΩ@VGS=-4.5V
- Fast switching
- Suit for 1.5V/-1.5V Gate Drive Applications
- Green Device Available
- SOT-363 package design
Applications
- Notebook
- Load Switch
-...