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GSM2219Y - Dual P-Channel MOSFET

General Description

These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -20V, -400mA, RDS(ON)=600mΩ@VGS=-4.5V.
  • Fast switching.
  • Suit for -1.5V Gate Drive.

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Datasheet Details

Part number GSM2219Y
Manufacturer Globaltech
File Size 536.15 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet GSM2219Y Datasheet

Full PDF Text Transcription for GSM2219Y (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GSM2219Y. For precise diagrams, and layout, please refer to the original PDF.

GSM2219Y 20V Dual P-Channel MOSFETs Product Description These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanc...

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field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Packages & Pin Assignments GSM2219YX7F (SOT-563) Features „ -20V, -400mA, RDS(ON)=600mΩ@VGS=-4.5V „ Fast switching „ Suit for -1.

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