DESCRIPTION
These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology. Packages & Pin Assignments GSM2219YX7F (SOT-563) FEATURES
-20V, -400mA, RDS(ON)=600mΩ@VGS=-4.5V Fast switching Suit for -1.5V Gate Drive APPLICATIONS
Green Device Available SOT-563 package design APPLICATIONS
Notebook Load Switch Networking Hand-Held Instruments Top Views Pin DESCRIPTION
Pin 1 Source 1 4 DESCRIPTION
Source 2 2 Gate 1 5 3 Drain 2 6 Gate 2 Drain 1 Ordering Information GS P/N GSM2219Y X7 F Package Code Pb Free Code Part Number GSM2219YX7F Package SOT-563 Part Marking EYM Quantity 3000pcs
Globaltech
