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GSM2151E - 25V P-Channel Enhancement Mode MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -25V, -4.3A, RDS(ON)=50mΩ@VGS=-10V.
  • Fast switching.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number GSM2151E
Manufacturer Globaltech
File Size 558.26 KB
Description 25V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet GSM2151E Datasheet
Additional preview pages of the GSM2151E datasheet.

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GSM2151E 25V P-Channel Enhancement Mode MOSFET Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features ◼ -25V, -4.3A, RDS(ON)=50mΩ@VGS=-10V ◼ Fast switching ◼ Suit for -4.
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