Datasheet Summary
25V P-Channel Enhancement Mode MOSFET
Product Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
Features
- -25V, -4.3A, RDS(ON)=50mΩ@VGS=-10V
- Fast switching
- Suit for -4.5V Gate Drive Applications
- G-S ESD Protection Diode Embedded
- Green Device Available
- SOT-23 package design
Applications
- Notebook
- Load Switch
- Battery Protection
-...