Datasheet4U Logo Datasheet4U.com

GSM2130JZF - 20V N-Channel MOSFET

Description

GSM2130JZF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 20V/5.4A, RDS(ON)=30mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design.

📥 Download Datasheet

Datasheet preview – GSM2130JZF

Datasheet Details

Part number GSM2130JZF
Manufacturer Globaltech
File Size 465.79 KB
Description 20V N-Channel MOSFET
Datasheet download datasheet GSM2130JZF Datasheet
Additional preview pages of the GSM2130JZF datasheet.

📁 Similar Datasheet

  • GSM4 - Stepper Motor Drive (GerrnWich)
  • GSM5 - Stepper Motor Drive (GerrnWich)
  • GSM793E - 80CH Segment Driver (Syntec Semiconductor)
  • GSM7980 - Dot Matrix LCD Controller/Driver (Syntec Semiconductor)
  • GSM850 - (GSM850 / GSM900) Antenna Switch Module (Hitachi)
  • GSM850 - (GSM850 / GSM900) Antenna Switch Module (Kyocera)
  • GSM900 - (GSM850 / GSM900) Antenna Switch Module (Hitachi)
  • GSM900 - (GSM850 / GSM900) Antenna Switch Module (Kyocera)
  • GSMBD2004 - SWITCHING DIODE (GTM)
  • GSMBD4148 - SWITCHING DIODE (GTM)
Other Datasheets by Globaltech

Full PDF Text Transcription

Click to expand full text
GSM2130JZF 20V N-Channel MOSFET Product Description GSM2130JZF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Features ◼ 20V/5.4A, RDS(ON)=30mΩ@VGS=4.
Published: |