GSM2130JZF Overview
Description
1 Gate 2 Source 3 Drain.
Key Features
- 20V/5.4A, RDS(ON)=30mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- SOT-23 package design
| Part | GSM2130JZF |
|---|---|
| Description | 20V N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Globaltech |
| Size | 465.79 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |