Datasheet Summary
20V Dual N-Channel MOSFETs
Product Description
These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
These devices are well suited for high efficiency fast switching applications.
Packages & Pin Assignments
GSM2220YX7F (SOT-563)
Features
- 20V, 800mA, RDS(ON)=300mΩ@VGS=4.5V
- Fast switching
- Suit for 1.5V Gate Drive Applications
- Green Device Available
- SOT-563 package design
Applications
- Notebook
- Load Switch
- Networking
-...