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GSM2220Y - Dual N-Channel MOSFET

General Description

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 20V, 800mA, RDS(ON)=300mΩ@VGS=4.5V.
  • Fast switching.
  • Suit for 1.5V Gate Drive.

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Datasheet Details

Part number GSM2220Y
Manufacturer Globaltech
File Size 498.55 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet GSM2220Y Datasheet

Full PDF Text Transcription for GSM2220Y (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GSM2220Y. For precise diagrams, and layout, please refer to the original PDF.

GSM2220Y 20V Dual N-Channel MOSFETs Product Description These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanc...

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field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Packages & Pin Assignments GSM2220YX7F (SOT-563) Features „ 20V, 800mA, RDS(ON)=300mΩ@VGS=4.5V „ Fast switching „ Suit for 1.

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