Datasheet4U Logo Datasheet4U.com

GSM2220Y - Dual N-Channel MOSFET

Description

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V, 800mA, RDS(ON)=300mΩ@VGS=4.5V.
  • Fast switching.
  • Suit for 1.5V Gate Drive.

📥 Download Datasheet

Datasheet preview – GSM2220Y

Datasheet Details

Part number GSM2220Y
Manufacturer Globaltech
File Size 498.55 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet GSM2220Y Datasheet
Additional preview pages of the GSM2220Y datasheet.

📁 Similar Datasheet

  • GSM4 - Stepper Motor Drive (GerrnWich)
  • GSM5 - Stepper Motor Drive (GerrnWich)
  • GSM793E - 80CH Segment Driver (Syntec Semiconductor)
  • GSM7980 - Dot Matrix LCD Controller/Driver (Syntec Semiconductor)
  • GSM850 - (GSM850 / GSM900) Antenna Switch Module (Hitachi)
  • GSM850 - (GSM850 / GSM900) Antenna Switch Module (Kyocera)
  • GSM900 - (GSM850 / GSM900) Antenna Switch Module (Hitachi)
  • GSM900 - (GSM850 / GSM900) Antenna Switch Module (Kyocera)
  • GSMBD2004 - SWITCHING DIODE (GTM)
  • GSMBD4148 - SWITCHING DIODE (GTM)
Other Datasheets by Globaltech

Full PDF Text Transcription

Click to expand full text
GSM2220Y 20V Dual N-Channel MOSFETs Product Description These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Packages & Pin Assignments GSM2220YX7F (SOT-563) Features „ 20V, 800mA, RDS(ON)=300mΩ@VGS=4.5V „ Fast switching „ Suit for 1.
Published: |