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GSM2165JZF - 20V P-Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -20V, -4.1A, RDS(ON)=65mΩ@VGS=-4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Suit for -1.8V Gate Drive.

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Datasheet Details

Part number GSM2165JZF
Manufacturer Globaltech
File Size 374.76 KB
Description 20V P-Channel MOSFETs
Datasheet download datasheet GSM2165JZF Datasheet
Additional preview pages of the GSM2165JZF datasheet.

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GSM2165JZF 20V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features ◼ -20V, -4.1A, RDS(ON)=65mΩ@VGS=-4.5V ◼ Improved dv/dt capability ◼ Fast switching ◼ Suit for -1.8V Gate Drive Applications ◼ Green Device Available ◼ SOT-23 package design Applications ◼ Notebook ◼ Load Switch ◼ Hand-held Instruments ◼ Packages & Pin Assignments GSM2165JZF (SOT-23) Top Views Pin Description 1 Gate 2 Source 3 Drain GSM2165JZF www.
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