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GSM2320P Datasheet PDF

Globaltech GSM2320P

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Part No. GSM2320P
Datasheet GSM2320P Download
Manufacturer
Globaltech
Description N-Channel MOSFET
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GSM2320P datasheet page 1 preview

DESCRIPTION

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

FEATURES

„ 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V „ Improved dv/dt capability „ Fast switching „ Suit for 1.2V Gate Drive

APPLICATIONS

„ Green Device Available „ SOT-323 package design

APPLICATIONS

„ Notebook „ Load Switch „ Battery Protection „ Hend-Held Instruments Packages & Pin Assignments GSM2320PX5F (SOT-323) Top Views Pin

DESCRIPTION

1 Gate 2 Source 3 Drain Ordering Information GSM2320P 1 Marking Information Part Number GSM2320PX5F Package SOT-323 Part Marking kYM Quantity 3000pcs

ABSOLUTE MAXIMUM RATINGS

TA=25ºC Unless othe
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