DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V Improved dv/dt capability Fast switching Suit for 1.2V Gate Drive APPLICATIONS
Green Device Available SOT-323 package design APPLICATIONS
Notebook Load Switch Battery Protection Hend-Held Instruments Packages & Pin Assignments GSM2320PX5F (SOT-323) Top Views Pin DESCRIPTION
1 Gate 2 Source 3 Drain Ordering Information GSM2320P 1 Marking Information Part Number GSM2320PX5F Package SOT-323 Part Marking kYM Quantity 3000pcs ABSOLUTE MAXIMUM RATINGS
TA=25ºC Unless othe