GSM2320Y - N-Channel MOSFET

Globaltech

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

20V, 800mA, RDS(ON)=300mΩ@VGS=4.5V.
Improved dv/dt capability.
Fast switching.
Suit for 1.5V Gate Drive.

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GSM2320Y n-channel mosfet by Globaltech - Datasheet Preview

Datasheet Details

Part number	GSM2320Y
Manufacturer	Globaltech
File Size	529.33 KB
Description	N-Channel MOSFET
Datasheet	GSM2320Y Datasheet

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GSM2320Y 20V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features 20V, 800mA, RDS(ON)=300mΩ@VGS=4.5V Improved dv/dt capability Fast switching Suit for 1.