GSM3106ZF Description
These N-Channel enhancement mode power field effectatransistorsaareausingatrenchaDMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
GSM3106ZF Key Features
- 30V,054A,0RDS(ON)<6mΩ@VGS=10V
- High Power and current handing capability
- Lead Free and Green Devices Available
- DFN3x3-8L package design