Globaltech GSM6907Z
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | GSM6907Z |
|---|---|
| Datasheet | GSM6907Z Download |
| Manufacturer |  Globaltech |
| Description | 60V P-Channel MOSFETs |
| Buy | Stock & Price |
DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.FEATURES
● -60V, -14A, RDS(ON)=65mΩ@VGS=-10V● Fast switching
● Suit for -1.8V Gate Drive
APPLICATIONS
● Green Device Available● Improved dv/dt capability
APPLICATIONS
● Motor Drive● Power Tools
● LED Lighting Packages & Pin Assignments GSM6907ZFF (DFN3X3-8L) GSM6907Z Top View Pin
DESCRIPTION
1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 1 Ordering Information Part Number GSM6907ZFF Marking Information Package DFN3X3-8L Quantity 5000pcs GSM6907ZABSOLUTE MAXIMUM RATINGS
TC=25ºC Unless otherwise noted Symbol Parameter VDS VGS ID IDM EAS IAS PD Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=100℃ Pulsed Drain Current1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25℃) Power Dissipation-Derate above 25℃ TJ Operating Junction Temperature Range TSTG Storage Temperature Range RθJA Thermal Resista...
