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GSM6907Z - 60V P-Channel MOSFETs

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -60V, -14A, RDS(ON)=65mΩ@VGS=-10V.
  • Fast switching.
  • Suit for -1.8V Gate Drive.

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Datasheet Details

Part number GSM6907Z
Manufacturer Globaltech
File Size 565.38 KB
Description 60V P-Channel MOSFETs
Datasheet download datasheet GSM6907Z Datasheet

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Full PDF Text Transcription

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GSM6907Z 60V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features  -60V, -14A, RDS(ON)=65mΩ@VGS=-10V  Fast switching  Suit for -1.
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