GSMBSS84 - 60V P-Channel Enhancement Mode MOSFET

Globaltech

General Description

GSMBSS84, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

-60V/-0.13A,RDS(ON)=10Ω@VGS=-5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
SOT-23 package design.

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GSMBSS84 60v p-channel enhancement mode mosfet by Globaltech - Datasheet Preview

Datasheet Details

Part number	GSMBSS84
Manufacturer	Globaltech
File Size	524.56 KB
Description	60V P-Channel Enhancement Mode MOSFET
Datasheet	GSMBSS84 Datasheet

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GSMBSS84 60V P-Channel Enhancement Mode MOSFET Product Description GSMBSS84, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Features  -60V/-0.13A,RDS(ON)=10Ω@VGS=-5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design Applications  DC to DC Converter  Cellular & PCMCIA Card  Cordless Telephone  Power Management in Portable and Battery etc.