DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
30V, 80A, RDS(ON)=5.5mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS guaranteed Green Device Available DFN5X6-8L package design APPLICATIONS
MB / VGA / Vcore POL APPLICATIONS
SMPS 2nd SR Packages & Pin Assignments GSMDC3906XFF (DFN5X6-8L) GSMDC3906X Bottom View Pin DESCRIPTION
1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 1 Ordering Information GS P/N GSMDC3906X F F Package Code Pb Free Code Part Number GSMDC3906XFF Package DFN5X6-8L Marking Information Absolute Maxi