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GSMDC3906Z Datasheet PDF

Globaltech GSMDC3906Z

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Part No. GSMDC3906Z
Datasheet GSMDC3906Z Download
Manufacturer
Globaltech
Description N-Channel MOSFET
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GSMDC3906Z datasheet page 1 preview

DESCRIPTION

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

FEATURES

„ 30V, 60A, RDS(ON)=6mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ 100% EAS guaranteed „ Green Device Available „ DFN3X3-8L package design

APPLICATIONS

„ MB / VGA / Vcore „ POL

APPLICATIONS

„ SMPS 2nd SR Packages & Pin Assignments GSMDC3906ZFF (DFN3X3-8L) GSMDC3906Z Top View Pin

DESCRIPTION

1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 1 Ordering Information GS P/N GSMDC3906Z F F Package Code Pb Free Code Part Number GSMDC3906ZFF Package DFN3X3-8L Marking Information Absolute Maximum Rat
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