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GSMDC3907Z - 30V P-Channel Enhancement Mode MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -30V, -30A, RDS(ON)=18mΩ@VGS=-10V.
  • Fast switching.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number GSMDC3907Z
Manufacturer Globaltech
File Size 444.77 KB
Description 30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet GSMDC3907Z Datasheet

Full PDF Text Transcription for GSMDC3907Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GSMDC3907Z. For precise diagrams, and layout, please refer to the original PDF.

GSMDC3907Z 30V P-Channel Enhancement Mode MOSFET Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. Thi...

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e power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features  -30V, -30A, RDS(ON)=18mΩ@VGS=-10V  Fast switching  Suit for -4.

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