Globaltech GSMDC3907Z
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | GSMDC3907Z |
|---|---|
| Datasheet | GSMDC3907Z Download |
| Manufacturer |  Globaltech |
| Description | 30V P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.FEATURES
● -30V, -30A, RDS(ON)=18mΩ@VGS=-10V● Fast switching
● Suit for -4.5V Gate Drive
APPLICATIONS
● Green Device Available● DFN3X3-8L package design
APPLICATIONS
● MB / VGA / Vcore● POL
APPLICATIONS
● Load Switch● LED Application Packages & Pin Assignments GSMDC3907ZFF (DFN3X3-8L) GSMDC3907Z Top View Pin
DESCRIPTION
1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 1 Ordering Information GS P/N GSMDC3907Z F F Package Code Pb Free Code Part Number GSMDC3907ZFF Package DFN3X3-8L Quantity 5000pcs Marking Information GSMDC3907ZABSOLUTE MAXIMUM RATINGS
TC=25ºC Unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current TC=25℃ TC=100℃ IDM Pulsed Drain Current1 Power Dissipation (TC=25℃) PD Power Dissipation-Derate above 25℃ TJ Operating Junction Temperature Range TSTG Storage Temperature Range RθJA Ther...
